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| Power Transistor FP812 Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings -120 -120 -6 -8 (pulse -12) -3 35 (Tc=25C) 150 -55 to +150 Unit V V V A A W C C Electrical Characteristics Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = -120V VEB = -6V IC = -50mA VCE = -4V, IC = -3A IC = -3A, IB = -0.3A Ratings 10max 10max -120min 70min -0.3max 4 (Ta=25C) Unit A A V V External Dimensions FM20 (full-mold) 10.0 4.2 2.8 3.3 C0.5 8.4 a b 16.9 VCC (V) 12 RL () 4 IC (A) 3 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -30 IB2 (mA) 30 ton (s) 2.5 tstg (s) 0.4 tf (s) 0.6 2.54 2.2 1.35 1.35 0.85 2.54 3.9 Typical Switching Characteristics 0.8 2.6 (13.5) 0.45 BCE a) Type No. b) Lot No. (Unit: mm) s IC -- VCE Characteristics (typ.) -8 mA 00 -3 s VCE (sat) -- IB Characteristics (typ.) -100mA -75mA s IC -- VBE Temperature Characteristics (typ.) -8 (VBE = -4V) -2 Ic = -3A -2 0 0m A -1 50 m A -6 -50mA -6 VCE (sat) (A) Ic = -5A IC (A) IC (A) -4 -25mA -2 -1 -4 Tc = -40C 25C 75C 125C 0 -0.5 -1.0 -1.5 IB = -10mA Ic = -1A -2 0 0 -1 -2 -3 -4 0 -5 -10 -50 -100 -500 -1000 -2000 0 VCE (V) IB (mA) VBE (V) s hFE -- IC Characteristics (typ.) 500 (VCE = -4V) s hFE -- IC Temperature Characteristics (typ.) 500 Tc = 125C (VCE = -4V) s j-a -- t Characteristics ) C 25 50 10 5 (C/W) Typ hFE hFE 75C 25C 100 -55C 50 NO 1 0.5 Fin = (Ta Tc = 25C j-a 100 50 30 -0.01 -0.05 -0.1 -0.5 -1 -5 -8 Single Pulese -0.05 -0.1 -0.5 -1 -5 -8 0.1 0.05 0.0002 0.001 30 -0.01 0.01 0.1 1 10 100 IC (A) IC (A) t (sec) s fT -- IE Characteristics (typ.) 30 (VCE = 12V) s Safe Operating Area (single pulse) -12 -10 c se 1m s PC -- Ta Derating 40 natural air cooling Silicone grease Aluminum heatsink Unit: mm 10 Typ -5 m se 0m 10 D. C 30 ith W c c se fT (MHz) 20 (T c IC (A) C) PC (W) =2 5 in fin -1 -0.5 20 20 0* 20 0* 2 ite he at si nk 10 10 natural air cooling Without heatsink 100 *1 Without heatsink 00 * 2 0 0.01 0.05 0.1 0.5 1 5 10 -0.1 -3 -5 -10 -50 -100 -150 0 0 50 100 150 IE (A) VCE (V) Ta (C) 61 |
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